2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SD2318 features high dc current gain. low saturation voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 6v 3a 4.5 a(pulse)* collector current (pulse) * i cp 4.5 a collector power dissipation 1 w tc = 25 15 w junction temperature tj 150 storage temperature t stg -55to+150 * pw=100ms. collector current i c p c electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =50a 80 v collector-emitter breakdown voltage bv ceo i c =1ma 60 v emitter-base breakdown voltage bv ebo i e =50a 6 v collector cutoff current i cbo v cb =80v 100 a emitter cutoff current i ebo v eb =6v 100 a collector-emitter saturation voltage v ce(sat) i c =2 a, i b =0.05a 1.0 v base-emitter saturation voltage v be(sat) i c =2 a, i b =0.05a 1.5 v dc current transfer ratio h fe v ce =4v, i c =0.5a 560 1800 output capacitance f t v ce =5v, i e = -0.2a, f=10mhz 50 mhz transition frequency c ob v cb =10v, i e =0a, f=1mhz 60 pf h fe classification rank u v hfe 560 1200 820 1800 smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type smd type smd type ic smd type smd type ic smd type smd type smd type ic smd type smd type smd type product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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